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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3679 DESCRIPTION With TO-3PN package High voltage switching transistor APPLICATIONS For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage INC Collector-emitter voltage Emitter-base voltage ANG H Open emitter Open base MIC E SE CONDITIONS OND TOR UC VALUE 900 800 7 5 10 2.5 UNIT V V V A A A W ae ae Open collector Collector current (DC) Collector current -peak Base current (DC) Collector power dissipation Junction temperature Storage temperature TC=25ae 100 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC3679 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 800 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 0.5 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.4A 1.2 V ICBO Collector cut-off current VCB=800V ;IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE DC current gain IC=2A ; VCE=4V 10 30 fT Transition frequency IC=0.5A ; VCE=12V COB Switching times IN Collector output capacitance f=1MHz;VCB=10V ton Turn-on time ts Storage time CHA E SEM NG OND IC TOR UC 75 1.0 5.0 6 MHz pF |I s IC=2.0A IB1=0.3A ,IB2=-1A VCC=250V, RL=125| |I s tf Fall time 1.0 |I s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3679 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimentions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3679 CHA IN E SEM NG OND IC TOR UC 4 |
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